offset voltage造句
例句與造句
- Input offset voltage
輸入失調(diào)電壓 - Second , since input bias currents are not always small and can exhibit different polarities , source impedance levels should be carefully matched to minimize additional input bias current - induced offset voltages and increased distortion
其次,因為輸入偏置電流不一定都小,且可能體現(xiàn)不同的極性，而且源阻抗水平應(yīng)該仔細(xì)地進(jìn)行匹配，以將輸入偏置電流引起額外失調(diào)電壓和增加的畸變減到最小。 - 3 . a good result is gotten under the star - hspice simulation . the dc gain is 90 db , the offset voltage is 40 u v while driving 10k , the unity - gain frequency is 10mhz with phase margin 67 , the slew rate is 10w us while driving 10pf
用star - hspice仿真軟件對電路仿真，在1 . 5v電源電壓、直流10k負(fù)載、交流10pf負(fù)載的情況下，整個共模電壓范圍內(nèi)跨導(dǎo)基本保持恒定，只有18的變化，直流增益90db ，單位增益帶寬10mhz ，相位裕度80度，壓擺率10v s 。 - In order to do the research works above better , we must can precisely control the width of the quasi - 1d channel and the cut off point , and also must precisely inspire current in the 2deg , so we designed the 2 channel high precision and high stability voltage source , one channel can supply the minus voltage to the split - gate , and the other one can supply the offset voltage between the source and drain pole
為了進(jìn)行上述研究,必須能夠精確的控制準(zhǔn)一維電子通道的寬度和鉗斷,以及精確的在2deg上激勵電流,由此我們設(shè)計研發(fā)了給分裂門加負(fù)偏壓和給準(zhǔn)一維電子通道加源漏偏壓的兩路高精度高穩(wěn)定性饋源。 - Second , the results of theory analysis and simulation research show that the output of one cycle controlled bridge switching power amplifier have dc offset because of the nonideal characteristic of reset signal . the magnitude of output dc offset voltage is proportional to width of reset pulse . a voltage compensation technique is used to solve this question , and the computation formula of compensation voltage is gived . the circuit compensated and not are researched through simulation and experiment , which results show that compensated circuit solve the output dc offset effectively
其次，理論分析和仿真研究結(jié)果表明，由于復(fù)位脈沖的非理想特性，單周控制的全橋開關(guān)功率放大器輸出端存在直流偏置問題，其大小與復(fù)位脈沖的寬度成正比。針對輸出直流偏置問題，提出了電壓補償?shù)母倪M(jìn)方案，給出了補償電壓的具體計算公式。對補償前和補償后的方案進(jìn)行了對比仿真研究和實驗研究。 - It's difficult to find offset voltage in a sentence. 用offset voltage造句挺難的
- The main work can be summed up as follows : firstly , we studied the thermal - field properties of vcsels , and analyzed the influences of current spreading , material parameters and operating conditions on the temperature distributions . secondly , we began with the electrode voltage and calculated the equipotential s distributions , compared the distributions of voltages and current densities in different depths of vcsels , and then studied the influences of the oxide - confining region with different position or thickness , and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density , carrier concentration and temperature in the active region . thirdly , we realized the coupling of electricity , optical and thermal - fields , worked out the threshold voltage , calculated the distributions of the injected current density , carrier concentration and temperature under different offset voltages , and analyzed the impacts of temperature profile and carrier density on the refractive index , fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數(shù)和工作條件對于溫度分布的影響；其次，從電極電壓入手，計算出激光器中的等勢線分布，并對不同深度處的電壓和電流分布進(jìn)行比較，研究了高阻區(qū)的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分布的影響；再次，實現(xiàn)了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分布、載流子濃度分布和熱場分布，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最后，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分布，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分布的影響。